Title:
METHOD FOR GROWING SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JPS6456392
Kind Code:
A
Abstract:
PURPOSE:To improve the stability of a crucible, to promote escape of heat from the crucible, to exclude disturbance at the time of solidifying a melt, and to obtain a large-diameter and high-quality single crystal by interposing the same material as the single crystal forming metal between the crucible of the Bridgman's single crystal growth device and a crucible holder. CONSTITUTION:The crucible 1 of the Bridgman's single crystal growth device having the diameter corresponding to the desired single crystal and made of the material (e.g., alumina, graphite, silica, and nitrides) is set on the metallic crucible holder 3 placed on a bottom plate, whose protrusion 7 from the bottom end pierces the bottom plate 5 and penetrates into an internally-cooled lifting shaft 9, and having excellent strength and heat conductivity with the same material 20 as the single crystal material in between. A single crystal forming metal such as copper or an alloy M is then charged in the crucible 1, the crucible 1 is heated by a heater 10 through the protecting tube 14 made of graphite, etc., and fixed to the outer periphery of the bottom plate 5 to melt the metal M and the intervening metal 20, the crucible 1 is closely attached to the crucible holder 3 to promote the heat flow in the vertical direction, and a single crystal is grown.
Inventors:
OKAMOTO HARUMICHI
YAMAMOTO NORIO
YAMAZAKI TORU
YAMAMOTO NORIO
YAMAZAKI TORU
Application Number:
JP21293287A
Publication Date:
March 03, 1989
Filing Date:
August 28, 1987
Export Citation:
Assignee:
NIPPON MINING CO
International Classes:
C30B11/00; (IPC1-7): C30B11/00
Attorney, Agent or Firm:
Motohiro Kurauchi