METHOD FOR GROWING ZNSE SINGLE CRYSTAL

Japanese Patent JPH0416599

A

PURPOSE:To suppress abnormal growth and to rapidly obtain the large-sized crystal by inclining an ampoule and maintaining the sequence of the growth speeds of respective surfaces always constant at the time of putting a seed crystal and raw materials into the ampoule and growing the single crystal by using chemical transportation. CONSTITUTION:The seed crystal 3 and the raw materials ZnSe 2 for growth are put into the ampoule 1 and the single crystal is grown by the chemical transportation method using a tamp. gradient. The above-mentioned ampoule 1 is inclined from a vertical direction by 5 to 50 deg. angle to direct the {111} B face of the seed crystal 3 toward the bottom of the ampoule 1. The growth speeds on the growth surface of the seed crystal 3 are so set as to be in the sequence of V{111} B(the growth speed of the {111} B face)