Title:
METHOD FOR HIGH-SPEED FILM GROWTH OF EPITAXIAL Si
Document Type and Number:
Japanese Patent JP3480448
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a method for high-speed film growth of an epitaxial Si film, which can be utilized to manufacture LSI devices or solar cells by finding out film growth conditions for the Si epitaxial growth at a high film-growth rate and at a temperature lower than that of conventional thermal CVD by fully utilizing an advantage of using a rotary electrode.
SOLUTION: A rotary body is arranged with a gap against a substrate which is held on a susceptor. For the atmospheric gas, an inert gas of atmospheric pressure, to which H2 of 0-5% and SiH4 of 0.05-5% are mixed, is used. Temperature of the susceptor is set at 1,000°C or lower. A thin film of epitaxial Si is grown while a gas flow traversing the gap is formed by rotating the rotary body at a high rate.
Inventors:
Yuzo Mori
Application Number:
JP2001060996A
Publication Date:
December 22, 2003
Filing Date:
March 05, 2001
Export Citation:
Assignee:
Yuzo Mori
International Classes:
H01L21/205; (IPC1-7): H01L21/205
Domestic Patent References:
| JP9104985A | ||||
| JP2000355773A | ||||
| JP200230438A | ||||
| JP2002217117A |
Attorney, Agent or Firm:
Takao Yagino