Title:
窒化ケイ素スペーサーの選択的エッチング中の形状制御を改善する方法
Document Type and Number:
Japanese Patent JP7241894
Kind Code:
B2
Abstract:
Cyclic etch methods comprise the steps of: i) exposing a SiN layer covering a structure on a substrate in a reaction chamber to a plasma of hydrofluorocarbon (HFC) to form a polymer layer deposited on the SiN layer that modifies the surface of the SiN layer, the HFC having a formula CxHyFz where x=2-5, y>z, the HFC being a saturated or unsaturated, linear or cyclic HFC; ii) exposing the polymer layer deposited on the SiN layer to a plasma of an inert gas, the plasma of the inert gas removing the polymer layer deposited on the SiN layer and the modified surface of the SiN layer on an etch front; and iii) repeating the steps of i) and ii) until the SiN layer on the etch front is selectively removed, thereby forming a substantially vertically straight SiN spacer comprising the SiN layer on the sidewall of the structure.
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Inventors:
Kuo, Shanyu
Royer, James
Perem, Vencataswara Earl.
Stafford, Nathan
Royer, James
Perem, Vencataswara Earl.
Stafford, Nathan
Application Number:
JP2021544933A
Publication Date:
March 17, 2023
Filing Date:
January 31, 2020
Export Citation:
Assignee:
Rail Liquide-Societe Anonym Pools Retude e Rex Prosatation de Procede Georges Claude
International Classes:
H01L21/3065
Domestic Patent References:
| JP2017516318A | ||||
| JP2010509776A | ||||
| JP2001068462A |
Foreign References:
| US20160233335 | ||||
| US20150187660 | ||||
| US20180102253 |
Attorney, Agent or Firm:
Michie Obuchi
Fuse Yukio
Fuse Yukio
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