Title:
METHOD FOR INSPECTING CHARACTERISTICS OF SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JP3891862
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To obtain a reverse breakdown voltage waveform having no recess.
SOLUTION: A method for examining characteristics of a semiconductor element comprises the step of setting the energizing time of a reverse current (IR) at an arbitrary measuring point, to S1 to S6=2 ms from 0.6 ms of a prior art in steps S1 to S6, when the so-called soft waveform of smooth steepness, in response to the steepness of a rise gradient (ΔVR/ΔIR) of a reveres breakdown voltage waveform (VR) of an element (DUT) to be measured is shown. Thus, in step S5, a recess (He) of the reverse breakdown voltage waveform VR is recovered, a normal reverse voltage waveform (VR) is obtained, and accurate reverse breakdown voltage can be measured under accurate measuring conditions.
Inventors:
Koji Kaga
Application Number:
JP2002061376A
Publication Date:
March 14, 2007
Filing Date:
March 07, 2002
Export Citation:
Assignee:
Nippon Inter Co., Ltd.
International Classes:
G01R31/26; (IPC1-7): G01R31/26
Attorney, Agent or Firm:
Kozo Sakakibara