Title:
METHOD OF LOCATING CAUSE OF FAULT IN SEMICONDUCTOR
Document Type and Number:
Japanese Patent JP3492226
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To locate the cause of fault precisely and quickly, utilizing effectively the result of the electric inspection of a wafer.
SOLUTION: A region is divided into a process margin cause region 11 and a foreign matter cause region 12 from the adjacency of defect category, using a wafer map 10 consisting of nondefective and defective categories for every die being the results of electric inspection of a wafer, and the measurement points of, for example, the dimensional inspection of this wafer 21 are sorted into measurement points which belong to the process margin cause region 11 and the measurement points which belong to the foreign matter cause region 12. Then, a histogram 13 of the dimensional measurement values at measurement points 32 which belong to the process margin cause region 11 and the histogram 14 of the dimensional measurement values 31 at the measurement points 31 which belong to the foreign matter cause region 12 are made, and these histograms 13 and 14 are compared with each other, whereby the cause of the defect caused by process margin or the defect caused by foreign matter is narrowed down.
Inventors:
Makoto Ono
Kazunori Nemoto
Koichi Nagura
Yoko Ikeda
Kazunori Nemoto
Koichi Nagura
Yoko Ikeda
Application Number:
JP2620199A
Publication Date:
February 03, 2004
Filing Date:
February 03, 1999
Export Citation:
Assignee:
株式会社日立製作所
International Classes:
H01L21/66; (IPC1-7): H01L21/66
Domestic Patent References:
| JP10199953A | ||||
| JP10209230A | ||||
| JP10303266A | ||||
| JP10214870A | ||||
| JP6358138A |
Attorney, Agent or Firm:
Kenjiro Take