METHOD OF MAKING ELECTRIC FIELD EFFECT DEVICE ON SILICON SUBSTRATE

Title:

METHOD OF MAKING ELECTRIC FIELD EFFECT DEVICE ON SILICON SUBSTRATE

Document Type and Number:

Japanese Patent JPS61187224

Kind Code:

A

Abstract:

Improved processing for MOS and CMOS transistors formed in an epitaxial-like layer. Field oxide regions are formed followed by the deposition of a polycrystalline or amorphous silicon layer which contacts the substrate at "seed windows" formed between the field oxide regions. The silicon layer is recrystallized from the substrate through the seed windows. The transistors are fabricated within the recrystallized silicon layer.

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Inventors:

UIRIAMU BEEEGU
CHII EICHI TEIN
TERENSU TAIIRI FUWA

Application Number:

JP2424086A

Publication Date:

August 20, 1986

Filing Date:

February 07, 1986

Export Citation:

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Assignee:

INTEL CORP

International Classes:

H01L29/78; H01L21/20; H01L21/263; H01L21/336; H01L21/761; H01L21/762; H01L27/00; H01L29/06; H01L27/06; (IPC1-7): H01L21/20; H01L21/263; H01L27/00; H01L29/78

Attorney, Agent or Firm:

Masaki Yamakawa

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