Title:
METHOD FOR MAKING SEMICONDUCTOR SUBSTRATE
Document Type and Number:
Japanese Patent JP2002321999
Kind Code:
A
Abstract:
To provide methods for making semiconductor substrates with few crystal defects.
The method for making the semiconductor substrates comprising a first step of forming at least a trench 42 on GaN substrates 40 which are the semiconductor substrates and a second step in which a GaN thin film is formed on the GaN substrates, and concave and convex portions are covered with the GaN thin film, with GaN thin film being formed at the laterally growing GaN thin film portions at the laterally growth rate sufficient to cover vertically growing GaN thin film portions.
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Inventors:
RI GENSEKI
NAN GYOKUGEN
SON TETSUSHU
NAN GYOKUGEN
SON TETSUSHU
Application Number:
JP2002000871A
Publication Date:
November 08, 2002
Filing Date:
January 07, 2002
Export Citation:
Assignee:
SAMSUNG ELECTRO MECH
International Classes:
H01L21/20; H01L21/205; H01L33/22; H01L33/32; C30B29/38; H01S5/323; (IPC1-7): C30B29/38; H01L21/205; H01L33/00; H01S5/323
Attorney, Agent or Firm:
Mikio Hatta (4 outside)