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Title:
METHOD OF MAKING SUPERFINE SILICON CHIP
Document Type and Number:
Japanese Patent JPH03104136
Kind Code:
A
Abstract:
PURPOSE: To provide a satisfactory hyperfine tip by forming a mask pattern on a mask layer, forming a tip rod through etching, making the rod thin through isotropic wet etching and removing a mask. CONSTITUTION: As a material, a silicon wafer 1 coated with a dioxide silicon layer 2 is used, a photoresist layer is installed on the layer 2, and the required mask pattern is formed. Next, the dioxide silicon mask 2 is transferred into the deep part of silicon 1 by anisotropic etching. Corresponding to the depth of etching, the length of a rod 3 at the section to become the tip is determined. The side wall of the rod 3 is covered with a side wall redeposited layer 4, and this is removed by isotropic wet etching. At the same time, a conical base part 5 of the rod 3 for etching is formed and stability is mechanically improved. Next, by removing the mask 2 through dip etching using buffer hydrofluoric acid, the tip having a rectangular cross section can be provided.

Inventors:
TOMASU BAIERU
YOHAN GURESHIYUNAA
IBUSU MAACHIN
HERUGA BUAISU
HEMANTA KEI UITSUKURAMASHINGU
ORAAFU BUORUTAA
Application Number:
JP20532990A
Publication Date:
May 01, 1991
Filing Date:
August 03, 1990
Export Citation:
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Assignee:
IBM
International Classes:
G01B21/30; G01N27/00; G01Q10/04; G01Q60/04; G01Q60/16; G01B7/34; G01Q60/38; G01Q70/10; H01J37/28; H01L21/00; H01L21/66; (IPC1-7): G01B7/34; G01B21/30; H01J37/28; H01L21/66
Attorney, Agent or Firm:
Koichi Tonmiya (1 person outside)



 
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