To provide a method for manufacturing a bonded wafer which does not complicate polishing work, is excellent in productivity, inexpensive and can easily controls a thickness of an active layer in a predefined standard.
The method for manufacturing the bonded wafer includes the steps of: forming a bonded body by bonding a supporting wafer with an active layer wafer (S1); forming an active layer of a first thickness by processing the active layer wafer side of the bonded body (S2); sticking a plurality of the bonded bodies formed with the active layers on a polishing plate and polishing the active layers to a second thickness (S3); optically measuring the second thickness in the state that the polished bonded bodies are stuck to the polishing plate (S4); and re-polishing the active layers to a third thickness (S5) based on the second thickness measured.
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Tetsuma Ikegami
Akira Sudo