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Title:
METHOD FOR MANUFACTURING CHALCOGEN COMPOUND POWDER
Document Type and Number:
Japanese Patent JP2010105887
Kind Code:
A
Abstract:

To solve problems that a ligand is required to be changed depending on the kind of a metal to form a metallic complex in a method using the ligand in the production of a chalcogen compound, and the process is difficult when a nano-crystal is ternary or quaternary one; that waste water containing the ligand causes trouble; and that a CuInSe-based compound is not formed in a single phase, e.g. in a state of a metal hydroxide obtained by co-precipitating hydroxide of Cu and In from Cu(NO3)2 or In(NO3)3 of nitrate with an ammonia aqueous solution or in a state of an oxide after dehydration reaction, the metal oxide is locally generated in a reaction to form chalcogen when a temperature is raised to the reaction temperature in a high boilng point solvent.

A nanoparticle of the chalcogen compound containing the ternary or quaternary one (a compound comprising one or more kinds of metal elements and one or more kinds of elements selected from Se, S and Te as structural elements) is obtained by adding a chalcogen source containing one or more kinds of a hydroxide, an oxide and an oxalate and one or more kinds of Se, Te and S into a reducing solvent and heating to 200C.


Inventors:
TAGAMI KOJI
ISHIKAWA YUICHI
FUJINO TAKEAKI
Application Number:
JP2008281793A
Publication Date:
May 13, 2010
Filing Date:
October 31, 2008
Export Citation:
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Assignee:
DOWA ELECTRONICS MATERIALS CO
International Classes:
C01B19/04; C01B17/20; H01L31/04
Domestic Patent References:
JP2005187314A2005-07-14
JP2008142650A2008-06-26
JP2003001096A2003-01-07
JP2003020228A2003-01-24
JP2007521221A2007-08-02
JP2008056552A2008-03-13
JP2007077010A2007-03-29
JP2006160600A2006-06-22
Attorney, Agent or Firm:
Takashi Okada
Yoshitaka Okada