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Title:
METHOD OF MANUFACTURING COLD CATHODE FIELD ELECTRON EMISSION ELEMENT AND METHOD OF MANUFACTURING COLD CATHODE FIELD ELECTRON EMISSION DISPLAY DEVICE
Document Type and Number:
Japanese Patent JP2002270087
Kind Code:
A
Abstract:

To provide a method of manufacturing a cold cathode field electron emission element preventing easy adhesion of contaminants on side walls of an opening provided in an insulating layer and preventing deterioration of an electron emission characteristic.

In the method of manufacturing the cold cathode field electron emission element provided with a support body 10, a cathode electrode 11, the insulating layer 12, a gate electrode 13 formed on the insulating layer 12 and having a hole part 14A, the opening 14B formed on the insulating layer 12 and communicated with the hole part 14A, and an electron emitting part 15 provided on the gate electrode 11 exposed in a bottom of the opening 14B, the opening 14B is formed on the insulating layer 12 by a dry etching method and then the side walls of the opening 14B are smoothed.


Inventors:
ISHIWATARI MIKA
Application Number:
JP2001071842A
Publication Date:
September 20, 2002
Filing Date:
March 14, 2001
Export Citation:
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Assignee:
SONY CORP
International Classes:
H01J9/02; (IPC1-7): H01J9/02
Domestic Patent References:
JPH11176791A1999-07-02
JPH04355027A1992-12-09
JPH07320636A1995-12-08
JP2000183287A2000-06-30
JP2000357448A2000-12-26
JP2000215792A2000-08-04
JPH0896701A1996-04-12
JP2000156147A2000-06-06
Attorney, Agent or Firm:
Takahisa Yamamoto