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Patent Searching and Data


Title:
METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR
Document Type and Number:
Japanese Patent JP2003173977
Kind Code:
A
Abstract:

To provide a method for manufacturing a compound semiconductor capable of manufacturing the object compound semiconductor on an InP crystal without the special facility of dealing with P.

The method for manufacturing the compound semiconductor comprises the steps of first growing a cap layer 3 under the growing condition of a low temperature, in which the separation of the P from the InP substrate 2 is small by an MOCVD method when a required compound semiconductor crystal layer 4 not containing the P is grown and formed on the InP substrate 2 by the MOCVD method; forming the cap layer 3 while the separation of the P from the InP substrate is effectively suppressed without supplying a PH3; covering the surface of the InP substrate 2 with the cap layer 3 to preferably suppress the separation of the P from the InP substrate 2 even at a high temperature; and then growing the compound semiconductor crystal layer 4 on the cap layer 3 at a high growing temperature.


Inventors:
Takada, Tomoyuki
Ichikawa, Migaku
Application Number:
JP2001000373578
Publication Date:
June 20, 2003
Filing Date:
December 07, 2001
Export Citation:
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Assignee:
SUMITOMO CHEM CO LTD
International Classes:
C23C16/46; H01L21/205; H01L31/10; H01L33/30; (IPC1-7): H01L21/205; C23C16/46; H01L31/10; H01L33/00
Attorney, Agent or Firm:
高野 昌俊