To provide a method of manufacturing an Si/C compound-type negative electrode active material, by which the Si/C compound-type negative electrode active material suppressing generation of irreversible capacity can be obtained.
The method of manufacturing the Si/C compound-type negative electrode active material comprises: a mixing step in which Si material and carbon material are mixed by a mechanical energy-applying means and a raw material composition is obtained; a Si phase-containing compound composition step in which the raw material composition is calcined and a compound having a Si-phase is composed; and a SiOx phase dissipation step in which the compound is chemically etched using an Li-containing etching agent and calcined, and the SiOx-phase contained in the compound is dissipated.
USHIRODA SHIN
Kishimoto Tatsuto
Tetsuro Hoshino