METHOD FOR MANUFACTURING DIRECT BONDED WAFER

Title:

METHOD FOR MANUFACTURING DIRECT BONDED WAFER

Document Type and Number:

Japanese Patent JP2007027475

Kind Code:

A

Abstract:

To provide a method for manufacturing a direct bonded wafer capable of inexpensively manufacturing the direct bonding wafer of high quality which has a thin-film layer with high uniformity in film thickness, without generating voids or blisters on bonding interface.

The method includes at least a process for injecting oxygen ion into a bonding wafer so as to form an oxygen ion injection layer; a process for cleaning the bonding wafer and a base wafer, and then, forming a sticking substrate obtained by sticking the wafers on the oxygen ion implantated surface of the bonding wafer; a process for performing a bonding heat treatment to enhance the bonding strength on the sticking surface; a process for reducing the thickness of the bonding wafer so as to expose the oxygen ion implanted layer; and a process for removing the exposed oxygen ion implanted layer so as to expose the thin-film layer.

Inventors:

NAGAOKA YASUO
ISHIZUKA TORU
OTA TOMOHIKO

Application Number:

JP2005208548A

Publication Date:

February 01, 2007

Filing Date:

July 19, 2005

Export Citation:

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