To provide a method of processing semiconductor films for simultaneously forming a plurality of long crystal regions at high speed in accordance with a required circuit pattern.
A slit-like mask SMK which continuously shades a laser in a scanning direction D of an insulating substrate SUB is arranged in the middle of a laser optical system irradiating an insulating substrate SUB having a polycrystalline silicon semiconductor film PSI, and moving at high speed with a laser CL. Since the insulating substrate SUB is not irradiated with the laser in the shading region LSD of the installed slit-like mask SMK, a plurality of long crystal silicon semiconductor regions RSI and polycrystalline silicon semiconductor regions PSI are formed in parallel. A thin film transistor circuit to which high mobility is requested is formed in the long crystalline silicon semiconductor region RSI. A thin film transistor circuit to which high mobility is not requested is formed in the polycrystalline silicon semiconductor region PSI.
| WO/1998/007185 | IMPROVED DELINEATION PATTERN FOR EPITAXIAL DEPOSITIONS |
| JPH0737806 | SEMICONDUCTOR THIN FILM GROWTH METHOD |
| JP2014225672 | SEMICONDUCTOR DEVICE |
AZUMA HITOSHI
TANAKA MASAHIRO
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