To provide a method for manufacturing an electo-optic device, a method for manufacturing a semiconductor device, and an electro-optic device for surely preventing the damage of a gate insulating layer due to a channel dope and the fluctuation of transistor characteristics.
In an element substrate 10x to be used by an electric-optic device such as a liquid crystal device, a base insulating layer 12 is formed on a support substrate 10d, and an active layer configuring an electric effective transistor 10y is formed on the surface of the base insulating layer 12. In the case of carrying out channel dope for adjusting the threshold voltage of the electric field effect transistor 10y, impurity is introduced through the base insulating layer 12 to a channel region 1x. Thus, any defect due to a stress in the case of channel dope can be prevented from being generated in a gate insulating layer 2y, and such a failure as current leak or insulating destruction can be prevented from being generated in a field effect transistor 10y.
Fujitsuna Hideyoshi
Kazuhiko Miyasaka