To provide a method for manufacturing an electronic device capable of improving reliability.
A method for manufacturing an electronic device in which a gap is formed between a first electrode 22 and a second electrode 33 located above the first electrode comprises the steps of: forming a first conductive film 24 including a noble metal and serving as the first electrode on a substrate 10; forming a first adhesion film 25 of silicon dioxide on the first conductive film; forming a sacrificial layer 27 of silicon dioxide on the first adhesion film; forming a second adhesion film 29 of silicon dioxide on the sacrificial layer; forming a second conductive film 30 including a noble metal and serving as the second electrode on the second adhesion film; and forming a gap between the first electrode and the second electrode by removing the sacrificial layer together with the first adhesion film and the second adhesion film by etching.
NAKATANI TADASHI
KATSUKI TAKASHI
