Title:
METHOD OF MANUFACTURING FIELD-EFFECT TRANSISTOR
Document Type and Number:
Japanese Patent JP2003258246
Kind Code:
A
Abstract:
To inexpensively supply deuterium to a field-effect transistor so that the deuterium may be supplied to a set depth with accuracy in a process of supplying the deuterium to the transistor.
A method of manufacturing the field-effect transistor comprises a step of forming an oxide film 14 on a silicon substrate 12, a step of forming a polysilicon electrode film 16 on the oxide film 14, and a step of supplying deuterium ions to the interface between the oxide film 14 and silicon substrate 12 through the polysilicon electrode film 16 by means of an ion implanter.
Inventors:
NAKAMURA TAKASHI
Application Number:
JP2002055931A
Publication Date:
September 12, 2003
Filing Date:
March 01, 2002
Export Citation:
Assignee:
IBM
International Classes:
H01L21/265; H01L21/28; H01L21/30; H01L21/336; H01L29/78; H01L29/51; (IPC1-7): H01L29/78; H01L21/265; H01L21/28; H01L21/336
Attorney, Agent or Firm:
Hiroshi Sakaguchi (2 outside)
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