METHOD OF MANUFACTURING GALLIUM NITRIDE-BASED POWER SEMICONDUCTOR DEVICE AND GALLIUM NITRIDE-BASED POWER SEMICONDUCTOR DEVICE

Title:

METHOD OF MANUFACTURING GALLIUM NITRIDE-BASED POWER SEMICONDUCTOR DEVICE AND GALLIUM NITRIDE-BASED POWER SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JP2013197326

Kind Code:

A

Abstract:

To obtain a small on resistance and a large breakdown voltage.

An internal trench IT is formed in the surface of a first layer 5 having first conductivity type. An impurity region 14 located on the sidewall SD of the internal trench IT and having second conductivity type different from the first conductivity type, and a non-injection region 11a having first conductivity type are formed, from the first layer 5 by injecting impurities into the sidewall SD of the internal trench IT. A second layer 11b filling the internal trench IT, having first conductivity type and forming a drift region 11 along with the non-injection region 11a is formed. When the second layer 11b is formed, the impurity region 14 is embedded in the drift region 11. A switching element having a channel of first conductivity type is formed on the drift region 11.

Inventors:

HAYASHI HIDEKI

Application Number:

JP2012063150A

Publication Date:

September 30, 2013

Filing Date:

March 21, 2012

Export Citation:

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Assignee:

SUMITOMO ELECTRIC INDUSTRIES

International Classes:

H01L29/78; H01L21/336; H01L21/337; H01L21/338; H01L29/778; H01L29/808; H01L29/812

Attorney, Agent or Firm:

Fukami patent office

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