To form a groove gate field-effect transistor, which can effectively suppress short-channel effect, in a shallow source-drain junction, with low resistance and in easy processes.

In a method of manufacturing a groove gate field-effect transistor 100A of a structure, having an impurity introduced layer 13, which is used as a source or a drain, is formed in a semiconductor substrate 1, by introducing impurities in the substrate 1; a groove 15 is bored in the layer 13, a gate insulating film 5 is formed on the bottom of the groove 15 and a gate G is formed, in such a way as to embed the groove 15, after the impurities are introduced in the substrate 1, and is subjected to laser annealing for activating the impurities prior to the gate G formation.