To provide a method for manufacturing a group-III nitride semiconductor, which can efficiently form a film of the group-III nitride semiconductor having an adequate film quality on a substrate through a reactive sputtering method.
A method for forming a group-III nitride semiconductor of a single crystal on the substrate 11 through the reactive sputtering method with the use of plasma, by arranging the substrate 11 and a target 47 containing a Ga element in a chamber 41 and supplying a nitrogen atom-containing gas and an inert gas into the chamber 41 with a reaction gas supply means 50 includes: making a pressure monitor 51 detect a pressure in the chamber 41; and making a flow control means 52 control a passing amount of the nitrogen atom-containing gas which has been supplied from the reaction gas supply means 50 into the chamber 41 on the basis of a detected signal (A) by the pressure monitor 51.
MIKI HISAYUKI
| JPH08120446A | 1996-05-14 | |||
| JP2001035805A | 2001-02-09 | |||
| JPH08181073A | 1996-07-12 | |||
| JPS6334931A | 1988-02-15 |
| WO2007129773A1 | 2007-11-15 |
Tadashi Takahashi
Takashi Watanabe
Suzuki Mitsuyoshi
Kazuya Nishi
Yasuhiko Murayama
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