Title:
METHOD OF MANUFACTURING III NITRIDE SEMICONDUCTOR SINGLE- CRYSTAL, AND METHOD FOR USING THE III NITRIDE SINGLE- CRYSTAL SEMICONDUCTOR
Document Type and Number:
Japanese Patent JP3634243
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a method by which a III nitride semiconductor single crystal, which is low in dislocation and superior in crystallinity and can be used as a semiconductor substrate can be manufactured, and to provide the semiconductor substrate.
SOLUTION: An AlN buffer layer 2 is formed on a (0001) sapphire substrate 1, and a GaN base layer 3 is formed on the layer 2. Then a recess 4, having a stepped bottom face, is formed by partially removing the base layer 3 by etching the layer 3 from its main surface. In addition, an AlN intermediate layer 5 is formed over the whole surface of the base layer 3, including the recess 4 and an AlGaN semiconductor layer 6, is formed on the intermediate layer 5, so as to fill the steps caused by the recess 4.
Inventors:
赤▲崎▼ 勇
Hiroshi Amano
Satoshi Ueyama
Motoaki Iwatani
Ryo Nakamura
Hiroshi Amano
Satoshi Ueyama
Motoaki Iwatani
Ryo Nakamura
Application Number:
JP2000198719A
Publication Date:
March 30, 2005
Filing Date:
June 30, 2000
Export Citation:
Assignee:
School corporation Meijo University
Japan Society for the Promotion of Science
Japan Society for the Promotion of Science
International Classes:
H01L21/205; H01L21/302; H01L33/12; H01L33/32; H01S5/323; (IPC1-7): H01L21/205; H01L21/302
Domestic Patent References:
| JP11191659A | ||||
| JP817803A | ||||
| JP11191657A | ||||
| JP2000244061A |
Attorney, Agent or Firm:
Kosaku Sugimura