To eliminate the need for high temperature heat treatment.

The surface of a semiconductor substrate (substrate) 11 where in an insulator layer 12 is formed in a part of surface is irradiated with the ion, 1,000 electron volt or less, of the same element as the semiconductor, so that, a semiconductor 13 is deposited, and the semiconductor layer 13 having been deposited and grown covers the insulator 12. Since the above of the insulator 12 is covered with the semiconductor layer 13 grown from the substrate 11, the same crystallinity as the substrate 11 is possessed, thus, no heat treatment for improving crystallinity is required.