Title:
エピタキシャル成長用積層基材の製造方法
Document Type and Number:
Japanese Patent JP6666655
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a manufacturing method of a laminate substrate for epitaxial growth, the method being capable of forming an oxide layer having a further improved crystal orientation compared to an uppermost surface layer of a metal substrate.SOLUTION: A laminate substrate consists of: a crystal orientation improving layer consisting of an oxide formed on an uppermost surface layer of a metal substrate 20 having a c-axis orientation ratio o 99% or more on the uppermost surface layer; and the oxide epitaxially grown to the crystal orientation improving layer. The laminate substrate includes a second oxide layer having Δω0.5° or more smaller than Δωof the uppermost surface layer of the metal substrate 20. A manufacturing method of the laminate substrate for epitaxial growth includes steps of: forming the crystal orientation improving layer on the metal substrate 20 by a RF magnetron sputtering at an angle α between a perpendicular line at a deposit position on the metal substrate 20 and a line leading to a point of zero magnetic flux density in a perpendicular direction on a target located at a shortest distance from a deposit position 20a to within 15°; and forming the second oxide layer by epitaxially growing the oxide to the crystal orientation improving layer.SELECTED DRAWING: Figure 1
Inventors:
Yusuke Hashimoto
Teppei Kurokawa
Hironao Okayama
Teppei Kurokawa
Hironao Okayama
Application Number:
JP2015076164A
Publication Date:
March 18, 2020
Filing Date:
April 02, 2015
Export Citation:
Assignee:
TOYO KOHAN CO.,LTD.
International Classes:
C23C14/34; C23C14/08; C23C14/35; H01B12/06
Foreign References:
| WO2015033808A1 |
Attorney, Agent or Firm:
Yusuke Hiraki
Satoshi Fujita
Atsushi Ohara
Satoshi Fujita
Atsushi Ohara