METHOD OF MANUFACTURING LIGHT EMISSION DIODE

Title:

METHOD OF MANUFACTURING LIGHT EMISSION DIODE

Document Type and Number:

Japanese Patent JP2012244169

Kind Code:

A

Abstract:

To provide a method of manufacturing a semiconductor light emission diode die using a liquid curing material which has a high refractive index, and excellent thermal stability and transparency, is liquid in its uncured state (without addition of a temporary solvent (fugitive solvent)), and facilitates mass-production of the semiconductor light emission diode die.

There is provided the semiconductor light emission diode die that has a plane using a curable liquid polysiloxane/TiO₂ composite which has a refractive index larger than 1.61 and equal to or less than 1.7 and is liquid at room temperature and under atmospheric pressure, the semiconductor light emission diode die emitting light from the plane. The semiconductor light emission diode die is brought into contact with the curable liquid polysiloxane/TiO₂ composite, which is cured to form an optical element, at least a part of the optical element being nearby the plane.

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Inventors:

PAUL J PAUPA
KHANARIAN GARO
ZHOU WEIJUN
JOHN R ELL

Application Number:

JP2012105588A

Publication Date:

December 10, 2012

Filing Date:

May 07, 2012

Export Citation:

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Assignee:

ROHM & HAAS ELECT MAT
DOW GLOBAL TECHNOLOGIES LLC

International Classes:

H01L33/56; B29C39/10; B29C39/24; C08G77/58; C08G79/00; H01L23/29; H01L23/31; H01L33/58; B29L11/00

Domestic Patent References:

JP2009513788A	2009-04-02
JP2007270004A	2007-10-18

Attorney, Agent or Firm:

Patent Business Corporation Sender International Patent Office

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