Title:
発光素子の製造方法
Document Type and Number:
Japanese Patent JP7182057
Kind Code:
B2
Abstract:
A method for manufacturing a light-emitting element comprises: forming a mask comprising a first film and a second film such that the mask covers a first active layer and a second nitride semiconductor layer, which comprises: forming the first film covering at least an upper surface of the second nitride semiconductor layer, and forming the second film covering the first film; while the first active layer and the second nitride semiconductor layer are covered with the mask, forming a third nitride semiconductor layer at an exposed portion of a first nitride semiconductor layer, wherein a temperature at which the third nitride semiconductor layer is formed is less than a melting point of the second film; and after the forming of the third nitride semiconductor layer, removing the mask, during which lift-off of the mask is performed by removing the first film, which also removes the second film.
Inventors:
Hiroshi Nishiyama
Seiichi Hayashi
Toshinori Wada
Seiichi Hayashi
Toshinori Wada
Application Number:
JP2019030156A
Publication Date:
December 02, 2022
Filing Date:
February 22, 2019
Export Citation:
Assignee:
Nichia Corporation
International Classes:
H01L33/32
Domestic Patent References:
| JP2002185044A | ||||
| JP2004119964A | ||||
| JP2002009004A | ||||
| JP2009054800A | ||||
| JP2001342100A | ||||
| JP2001210913A | ||||
| JP2001102689A | ||||
| JP2000214339A | ||||
| JP201182415A |
Foreign References:
| KR1020170108623A | ||||
| US20080283869 |
Attorney, Agent or Firm:
Hyuga Temple Masahiko
Junichi Kozaki
Hiroshi Ichikawa
Satoshi Shirai
Uchida Keito
Junichi Kozaki
Hiroshi Ichikawa
Satoshi Shirai
Uchida Keito
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