To provide a mask which can exposure a fine pattern without defect and a method for manufacturing the mask with high throughput and at a low cost, and to provide an exposure method and an aligner which can exposure a fine pattern free from defect with high throughput.

The method for manufacturing a mask is provided with a step for forming a first mask in which a transparent portion of a beam for exposure is formed by a prescribed pattern, a step for detecting, in the first mask, both a white defect wherein an unnecessary transparent portion is formed in a part except a pattern and a black defect, wherein a transparent portion is not formed in the pattern, a step for forming a shielding film for shielding the beam for exposure to the white defect, and a step for forming a second mask wherein a transparent portion of the beam for exposure is formed by the pattern of the white defect portion and the black defect portion. Further, a mask manufactured by the above, and an exposure method and an aligner which use the mask, are included.