METHOD FOR MANUFACTURING MEMORY ELEMENT COMPRISING RESISTIVITY-SWITCHING NiO LAYER AND DEVICES OBTAINED THEREOF

Title:

METHOD FOR MANUFACTURING MEMORY ELEMENT COMPRISING RESISTIVITY-SWITCHING NiO LAYER AND DEVICES OBTAINED THEREOF

Document Type and Number:

Japanese Patent JP2009164580

Kind Code:

A

Abstract:

To provide a manufacturing method for excellently holding data in an ON state in non-volatile memory devices comprising a reversible resistivity-switching layer used for storing data.

A resistivity-switching non-volatile memory element includes a resistivity-switching metal-oxide layer sandwiched between a top electrode and a bottom electrode. The metal-oxide layer has a gradient of oxygen over its thickness.

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Inventors:

COURTADE LORENE
LISONI REYES JUDIT
GOUX LUDOVIC
TURQUAT CHRISTIAN
MUELLER CHRISTOF
WOUTERS DIRK

Application Number:

JP2008286836A

Publication Date:

July 23, 2009

Filing Date:

November 07, 2008

Export Citation:

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Assignee:

IMEC INTER UNI MICRO ELECTR
UNIV DU SUD TOULON VAR

International Classes:

H01L27/10; H01L45/00; H01L49/00

Domestic Patent References:

JP2007180474A	2007-07-12
JP2008235427A	2008-10-02
JP2005197634A	2005-07-21
JP2005317976A	2005-11-10

Attorney, Agent or Firm:

Takuji Yamada
Mitsuo Tanaka
Haruo Nakano

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