Title:
METHOD FOR MANUFACTURING MEMS SENSOR
Document Type and Number:
Japanese Patent JP2019005853
Kind Code:
A
Abstract:
To shorten a TAT and prevent damage of an MEMS sensor caused by heat in manufacturing the MEMS sensor.SOLUTION: A method for manufacturing an MEMS sensor includes steps of: forming a first sealing film for closing a first hole portion on the first hole portion by irradiating the first hole portion formed on a second layer on a semiconductor substrate with a focused ion beam for first predetermined time; and forming a second sealing film for closing a second hole portion on the second hole portion by irradiating the second hole portion formed on the second layer with a focused ion beam for second predetermined time. The first predetermined time and the second predetermined time are time enabling a thermal equilibrium of the second layer to be maintained. The step of forming the first sealing film and the step of forming the second sealing film are performed repeatedly.SELECTED DRAWING: Figure 7
Inventors:
KINOSHITA MASAHARU
ISOBE ATSUSHI
ONO KAZUO
SAKUMA NORIYUKI
SEKIGUCHI TOMONORI
WATANABE KEIJI
ISOBE ATSUSHI
ONO KAZUO
SAKUMA NORIYUKI
SEKIGUCHI TOMONORI
WATANABE KEIJI
Application Number:
JP2017123905A
Publication Date:
January 17, 2019
Filing Date:
June 26, 2017
Export Citation:
Assignee:
HITACHI LTD
International Classes:
B81C1/00; H01J37/317; H04R19/00; H04R31/00
Attorney, Agent or Firm:
Tsutsui International Patent Office