Title:
METHOD FOR MANUFACTURING NITROGEN-DOPED SINGLE-WALLED CARBON NANOTUBE
Document Type and Number:
Japanese Patent JP2007182375
Kind Code:
A
Abstract:
To provide a method for manufacturing a nitrogen-doped single-walled carbon nanotube.
The method for manufacturing a nitrogen-doped single-walled carbon nanotube comprises the steps of: forming a catalyst metal layer on a substrate; mounting the substrate having the catalyst metal layer formed thereon in a reaction chamber; forming an H2O plasma atmosphere in the reaction chamber; supplying a carbon precursor and a nitrogen precursor into the reaction chamber to chemically react the carbon precursor and the nitrogen precursor under the H2O plasma atmosphere and thereby growing a nitrogen-doped carbon nanotube on the catalyst metal layer.
Inventors:
Bae, Eun-ju
Min, Yo-sep
Park, Won-jun
Min, Yo-sep
Park, Won-jun
Application Number:
JP2006000354080
Publication Date:
July 19, 2007
Filing Date:
December 28, 2006
Export Citation:
Assignee:
SAMSUNG ELECTRONICS CO LTD
International Classes:
C01B31/02
