METHOD OF MANUFACTURING ORGANIC TRANSISTOR

Title:

METHOD OF MANUFACTURING ORGANIC TRANSISTOR

Document Type and Number:

Japanese Patent JP2012151465

Kind Code:

A

Abstract:

To provide a method of manufacturing an organic transistor having a high field-effect mobility.

The method of manufacturing an organic transistor having a gate electrode, a source electrode, a drain electrode and an organic semiconductor layer includes a step of forming an organic film containing a compound which includes a structural unit represented by formula (1) [In the formula, R¹ and R² represent a substituent group, independently. R³ and R⁴ represent a hydrogen atom or a substituent group, independently. n and m represent an integer of 0-3, independently. Y represents a bivalent group. When there are a plurality of R¹ and a plurality of R², they may be identical or different from each other.], and a step of producing the organic semiconductor layer by desorbing at least a part of the bivalent group represented by Y.

Inventors:

YAMATE SHINICHI
TERAI HIROKI

Application Number:

JP2011283106A

Publication Date:

August 09, 2012

Filing Date:

December 26, 2011

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Assignee:

SUMITOMO CHEMICAL CO

International Classes:

H01L29/786; H01L21/336; H01L51/05; H01L51/30; H01L51/40

Domestic Patent References:

JP2009532878A	2009-09-10
JP2004107257A	2004-04-08
JP2005223048A	2005-08-18
JP2007273938A	2007-10-18
JP2005232136A	2005-09-02

Attorney, Agent or Firm:

Mitsuo Tanaka
Takuji Yamada
Masaishi Nishishita

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