To carry out patterning without requiring an additional investment even when a line-and-space pattern with a fine pitch is formed on an object to be processed.
A side etching width α is determined based on etching conditions for etching an object to be processed; a line width ML and a space width MS of a transfer pattern are determined based on the side etching width α and a line width WL and a space width WS of a film pattern; and exposure conditions to be applied upon exposure and a transmittance for light of a translucent film are determined so as to form a line-and-space film pattern having a line width WL and space width WS on the object to be processed by exposure using a photomask having a transfer pattern with the determined line width ML and space width MS and by etching.
JP2007010845A | 2007-01-18 | |||
JP2006330691A | 2006-12-07 | |||
JP2009278055A | 2009-11-26 | |||
JP2009042753A | 2009-02-26 |
Toru Yui
Hitoshi Kiyono
Fukuoka Masahiro
Okuyama Tomohiro