PURPOSE: To manufacture a high-sensitivity element easily without using a highly accurate etching technology or an epitaxial lower electrode formation technology by using SrTiO3 substrate, diffusion Nb on the substrate and forming a dope layer, and then forming PZT thin film.

CONSTITUTION: A substrate 1 is subjected to mirror-surface abrasion so that the surface is the (100) face using SrTiO3 substrate 1 and an electrode mask pattern is formed on the surface by photolithography. Then, Nb is diffused onto an electrode pattern for forming a dope layer 4 and then the electrode mask pattern is eliminated. Then, the PZT thin film 5 is deposited by the CVD method (Chemical Vapor Growth Method) and an upper electrode 6 consisting of a transmission conductive metal material such as Cr is formed on the upper surface and then the lower portion of the substrate 1 is etched to a specific shape before removal. By etching the substrate 1, thermal conductivity can be improved and sensitivity can be improved. Also, since the substrate 1 partially remains, a desired strendth can be maintained. The dope layer 4 becomes a lower electrode.