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Title:
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, EXPOSURE METHOD AND EXPOSURE DEVICE
Document Type and Number:
Japanese Patent JP2012129345
Kind Code:
A
Abstract:

To enhance exposure characteristics.

The exposure device comprises a light-emitting section (10) which emits EUV light by plasma excitation of predetermined atoms, a condensation section (20) which condenses the EUV light irradiated from the light-emitting section, an exposure section (30) which irradiates a substrate with the EUV light condensed by the condensation section through a mask, a first plasma position monitor (11a) which detects the light-emitting point of the EUV light in the light-emitting section, and a light-emitting section driver (13) which adjusts the position of the light-emitting section. A first amount of positional shift between the light-emitting point detected by the plasma position monitor and a light-emitting reference position is determined, and the light-emitting section driver is driven based on the first amount of positional shift. Furthermore, an exposure device is used which has a first condensation position monitor (21a) for detecting the position of condensation point of the EUV light condensed by the condensation section, and which has a condensation section driver (23) which adjusts the position of the condensation section. A second amount of positional shift between the condensation point and a reference condensation point is calculated, and the condensation section driver (23) is driven based on the calculation result of the second amount of positional shift.


Inventors:
SHIRAI SEIICHIRO
Application Number:
JP2010279065A
Publication Date:
July 05, 2012
Filing Date:
December 15, 2010
Export Citation:
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Assignee:
RENESAS ELECTRONICS CORP
International Classes:
H01L21/027; G02B19/00; G21K1/06
Attorney, Agent or Firm:
Yamato Tsutsui
Atsushi Sugada
Akiko Tsutsui
Toru Nakahara
Tetsuya Sakaji