To provide a method for manufacturing a semiconductor device including a step of removing a photoresist film or the like in which a photoresist film can be removed without requiring supply of a reactive gas and without requiring generation of plasma.

The method for manufacturing a semiconductor device includes a step of removing a photoresist film formed on a substrate, in which dry ice particles of a predetermined particle size are blasted at a predetermined pressure to the photoresist film while the substrate is heated to room temperature or higher, for example, 30 to 200°C and preferably around 100°C. Since the surface of the photoresist film after an ion implantation step is hardened, it is necessary to blast dry ice particles of a particle size as large as a certain degree at a pressure of as high as a certain degree. By heating the substrate, the dry ice particles blasted to the substrate vaporize to avoid damages to the substrate, and the photoresist film is effectively removed by the physical effect by the blasting pressure of the dry ice particles.

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