METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, STENCIL MASK AND ITS MANUFACTURING METHOD

Title:

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, STENCIL MASK AND ITS MANUFACTURING METHOD

Document Type and Number:

Japanese Patent JP2002203806

Kind Code:

A

Abstract:

To provide a stencil mask where distortion is hard to occur even if it is repeatedly used for an ion implanting step.

(a) A stencil mask comprising a silicon thin film 103 having an opening 104 of a prescribed transparent hole pattern shape is provided. (b) Impurity atoms are then doped into the silicon thin film by an ion implanting method. (c) A damaged region 105 is then recrystallized by heat-treating a sample and a doped hard silicon layer 106 is formed on the surface of the silicon thin film 103 where the opening 104 is formed.

Inventors:

SHIBATA TAKESHI
MATSUO KOJI
SUGURO KYOICHI
SUGIHARA KAZUYOSHI

Application Number:

JP2001290118A

Publication Date:

July 19, 2002

Filing Date:

September 21, 2001

Export Citation:

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Assignee:

TOSHIBA CORP

International Classes:

A61N5/00; B32B3/10; B32B9/04; B32B13/04; G03C5/00; G03F1/20; G03F9/00; G21G5/00; H01J37/317; H01L21/027; H01L21/26; H01L21/266; H01L21/324; H01L21/425; (IPC1-7): H01L21/266; G03F1/16; H01L21/027

Attorney, Agent or Firm:

Takehiko Suzue (6 outside)

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