Title:
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING MULTILAYER RESIST MASK
Document Type and Number:
Japanese Patent JPS5272176
Kind Code:
A
Abstract:
High sensitivity resist films for lift-off metallization are formed by coating a substrate with at least two layers of polymeric materials, each layer of which is developed by different developers that are mutual exclusive of one another. The resist can operate for lift-off at electron beam exposure equal to or greater than 5x10<->6 coulombs/cm2.
Inventors:
MIKAERU HATSUTOZAKISU
Application Number:
JP13474276A
Publication Date:
June 16, 1977
Filing Date:
November 11, 1976
Export Citation:
Assignee:
IBM
International Classes:
G03F7/039; G03F7/095; H01L21/027; H05K3/14; (IPC1-7): H01L21/302