METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - MATSUSHITA ELECTRIC IND CO LTD

Title:

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JP2003297848

Kind Code:

A

Abstract:

To suppress contamination and secondary contamination in a semiconductor device due to a group IV element Si, which becomes a contaminant in a manufacturing method of the semiconductor device including Si and the group IV element except Si.

A Si/SiGe film formed on the rear face of a semiconductor wafer is removed by wet etching right after the Si/SiGe film including contaminants is formed by epitaxial growth, or dummy run using a container is performed after the Si/SiGe film is heated in the container. Secondary contamination via a stage where the wafer is treated, a robot arm or a pair of vacuum tweezers and the contamination of the container also used in a manufacturing process of the semiconductor device which does not include the group IV element except Si can be suppressed.

Inventors:

NOTAKE SHUSUKE
ONISHI TERUTO
ASAI AKIRA
AOKI NARITSUYO

Application Number:

JP2002099163A

Publication Date:

October 17, 2003

Filing Date:

April 01, 2002

Export Citation:

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Assignee:

MATSUSHITA ELECTRIC IND CO LTD

International Classes:

H01L21/66; C23C16/01; C23C16/44; C23C16/56; H01L21/02; H01L21/20; H01L21/205; H01L21/306; H01L21/308; H01L21/3213; H01L21/331; H01L29/10; H01L29/732; H01L29/737; (IPC1-7): H01L21/331; H01L21/308; H01L21/66; H01L29/732; H01L29/737

Attorney, Agent or Firm:

Hiroshi Maeda (7 outside)

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