To form a contact hole which prevents a gate electrode and a source area or drain area from being short-circuited even if the misalignment of the contact hole occurs when a semiconductor device having a small interval between a semiconductor element and a contact hole is manufactured.

In addition to a process of forming an interlayer insulating film 6 after forming an element isolation insulating film 2, a gate electrode 3, a source or drain area 4, and a side wall insulating film 5 of the gate electrode 3 on a silicon substrate 1 and a conventional process of forming a contact hole 7; a process of forming an insulating film 10 on the side wall of the contact hole 7 is included to form the contact hole which can prevent the gate electrode 3 and source or drain area 4 from being short-circuited even when the contact hole 7 shifts in position.