To provide a method for manufacturing a semiconductor device by which the peeling-off of a layer to be the electrode of a capacitor can be suppressed.
A semi-spherical RGP film 6a is formed on a silicon oxide film 5 including the inside of an opening part 5a. A BPTEOS film 7, which embeds the opening part 5a, is formed under the temperature lower than the temperature of growing the silicon crystal. Next, the part of the semi-spherical RGP film 6a located in the opening part 5a is left. The other part is removed by CMP treatment. By this, the crystal growth of the silicon in the semi-spherical RGP film 6a can be suppressed. The scattering and peeling-off of the RGP film 6a can be suppressed when the CMP treatment or the like is applied. After that, an approximately semi-spherical RGP film 6b is formed by applying the annealing for growing the silicon crystal to the semi-spherical RGP film 6a. By this, the capacity of the capacitor can be increased as a result of the increase of the surface area of a storage node.
| JPH10178107 | CONTACT GATE STRUCTURE AND ITS METHOD |
| JPH03155666 | SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURE THEREOF |
| JPH0388364 | FORMATION OF MEMORY CELL PATTERN |
KAWASE YUSUKE
Toshio Morita
Yoshihei Nakamura
Yutaka Horii
Hisato Noda
Masayuki Sakai
Next Patent: APPARATUS AND METHOD FOR PLASMA TREATMENT