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Patent Searching and Data


Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2006083430
Kind Code:
A
Abstract:

To provide a technology of preventing ignition occurring during a maintenance operation for a thin-film-forming apparatus for forming a thin film made from a material active to oxygen.

This technology includes forming a metallic film MF1 containing oxygen on a target shield TGS, an exhaust shield EXS, a gas distribution plate GDB, a ring chuck RCK and the like, which are members composing the inner surface of a film-forming chamber of the thin-film-forming apparatus, or members arranged in the film-forming chamber, by previously thermal-spraying a metal on the surfaces. Thereby, when fine particles active to oxygen deposit on the surfaces of the members, oxygen in the metallic film MF1 diffuses into the deposited fine particles, and forms an oxide film OF1 to convert the fine particles active to oxygen, into an inactive state (chemically stable state).


Inventors:
BAN KAZUHIRO
MIYAMA YOSHIO
YAMAMOTO MASASHI
MITSUI KATSUHIRO
Application Number:
JP2004269482A
Publication Date:
March 30, 2006
Filing Date:
September 16, 2004
Export Citation:
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Assignee:
RENESAS TECH CORP
International Classes:
C23C14/34
Attorney, Agent or Firm:
Yamato Tsutsui