METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - MATSUSHITA ELECTRIC IND CO LTD

Title:

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JP2007053284

Kind Code:

A

Abstract:

To provide a method for manufacturing a semiconductor device capable of securely removing a residual halogen without a resistance of a conductive film lowered when etching the conductive film including a silicon by a halogen series gas.

The method for manufacturing the semiconductor device comprises the steps of etching the conductive film by the plasma of a gas including a halogen or a halogen compound, and removing the residual halogen on a substrate by the plasma of the gas without hydrogen terminating the dangling bond existing on the conductive film. The gas used in removing the residual halogen can be, for instance, a gas mainly comprising an oxygen gas as a main component. The conductive film comprises, for instance, a polysilicon film.

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Inventors:

NAKAI HIROYUKI
SATO EIICHI
IWAMOTO TOMOSHI
MATSUI YUKI

Application Number:

JP2005238302A

Publication Date:

March 01, 2007

Filing Date:

August 19, 2005

Export Citation:

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Assignee:

MATSUSHITA ELECTRIC IND CO LTD

International Classes:

H01L21/3065; H01L21/28; H01L21/3205; H01L21/3213; H01L23/52

Domestic Patent References:

JP2004319540A	2004-11-11
JPH07106298A	1995-04-21
JP2001093877A	2001-04-06

Attorney, Agent or Firm:

Toyoake Fukui

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