METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

Title:

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JP2008181990

Kind Code:

A

Abstract:

To make wiring in ELO dense and improve device characteristic.

The method of manufacturing a semiconductor device includes a step to form a specified device and a connection pad in a device layer which is grown in a semiconductor substrate 10 by means of a sacrificial layer; a step to form a specified pattern and a connection pad in a supporting substrate 20; a step to laminate the semiconductor substrate 10 and the supporting substrate 20 so that the connection pad of the semiconductor substrate 10 and the connection pad of the supporting substrate 20 may be electrically conducted by means of a connection metal; and a step to remove the sacrificial layer by etching while the semiconductor substrate 10 and the supporting substrate 20 are still laminated and to separate the semiconductor substrate 10 and the device layer.

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Inventors:

ONO HIDEKI
TANIGUCHI OSAMU

Application Number:

JP2007013265A

Publication Date:

August 07, 2008

Filing Date:

January 24, 2007

Export Citation:

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Assignee:

SONY CORP

International Classes:

H01L21/02; H01L21/3205; H01L21/331; H01L21/768; H01L23/52; H01L29/737

Attorney, Agent or Firm:

Funabashi Kuninori

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