To provide a method of manufacturing a semiconductor device by which an SiO2 film used as an embedded insulating film for STI can be highly densified and its film quality can be also improved.
The semiconductor device is manufactured by the following steps: a semiconductor film is formed on a semiconductor substrate 1; STI grooves 7a and 7b are formed at least on the semiconductor film; a coating type SiO2 is applied on the semiconductor film by spin coating to put the coating type SiO2 into the STI grooves 7a and 7b; the substrate is prebaked to form such a volatile substance discharge prevention layer 9 on the formed coating type SiO2 film 8 that prevents a volatile substance containing Si from passing through but allows at least H2O and O2 to pass through; and the substrate is heated at higher temperature than that in prebaking the coating type SiO2 film 8.
Yasukazu Sato
Hiroshi Yoshimoto
Yasushi Kawasaki
Tomoya Deguchi