To provide a method of manufacturing a semiconductor device capable of compensating in sufficiency of precision of the index of crystal orientation such as a notch and an orientation flat even when the precision is insufficient.

A compensation value for deviation of the index such as a notch is determined. In this compensation value determination process, an error of an angle of each semiconductor substrate is measured for all the semiconductor substrates being processing objects (step S101). A statistical process of the measured angles for the respective semiconductor substrates is carried out (step S102). Specifically, an offset value and magnitude of dispersion of the angle errors are obtained. When the size of the dispersion is in a predetermined range, a value obtained by inverting the sign of the offset value is determined as a compensation value of each semiconductor substrate (steps S103 and S104); and when it is out of the predetermined range, a value obtained by inverting the sign of the angle error measured for every semiconductor substrate is determined as a compensation value (steps S103 and step S105).