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Title:
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2009187966
Kind Code:
A
Abstract:

To provide a method of manufacturing a semiconductor device which can improve characteristics of a semiconductor device by accurately knowing the off- angle when an SiC substrate having off-angle is used to manufacture a semiconductor device.

A method of manufacturing MOSFET as the manufacturing method for the semiconductor device includes: a step (S10) to prepare an n+-SiC substrate which is made of silicon carbide and has an off-angle; a step (S50) to investigate the off direction of the n+-SiC substrate; and a step (S60) to form a mask having an opening pattern on the n+-SiC substrate. In the step (S60) to form a mask, the opening pattern is formed according to the investigated off-direction.


Inventors:
Harada, Makoto
Masuda, Kenryo
Ito, Satomi
Application Number:
JP2008000022930
Publication Date:
August 20, 2009
Filing Date:
February 01, 2008
Export Citation:
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Assignee:
SUMITOMO ELECTRIC IND LTD
International Classes:
H01L29/12; H01L21/336; H01L29/78
Domestic Patent References:
JPH04239778A
JP2008108824A
Attorney, Agent or Firm:
深見 久郎
森田 俊雄
仲村 義平
堀井 豊
野田 久登
酒井 將行
荒川 伸夫