To provide a method of manufacturing a semiconductor device constituted by bonding a second semiconductor device to a reverse surface of a first semiconductor device without lowering quality.

The method of manufacturing the semiconductor device includes a reverse-surface grinding process of grinding a reverse surface of a wafer 2 having a plurality of first devices formed by a laminate having an insulating film and a functional film laminated on a top surface of a substrate, a device bonding process of bonding the second semiconductor device 220 to the reverse surface of the wafer 2 to form a laminated wafer 222, a laminate removing process of irradiating the wafer 2 with a laser light beam along a street 23 defining a plurality of devices, a wafer supporting process of sticking the top surface 2a of the wafer 2 on a dicing tape T mounted on a frame, and a wafer dividing process of processing the wafer 2 from the reverse surface side of the substrate along the streets 23 to separate individual semiconductor devices each having a second semiconductor device 220 bonded to a reverse surface of a first semiconductor device.