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Patent Searching and Data


Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2012028549
Kind Code:
A
Abstract:

To provide a method for manufacturing a semiconductor device by solving a problem that sufficient barrier property sometimes can not be ensured when a porous Low-k material is used for an interlayer insulating film and a TiN film and an Ru film are used for a barrier metal film.

A method for manufacturing a semiconductor comprises the steps of: forming an insulating film on a substrate; forming a depressed area in the insulating film; forming a barrier film containing Al and one metal element selected from a group consisting of W, Ta, Ti and Co on an inner wall face of the depressed area and on a top face of the insulating film; forming a base film containing Ru, Pd, Ti, Ta, Pt or Ir on the barrier film; forming a conductive film containing Cu on the base film to embed the depressed area with the conductive film; and oxidizing Al contained in the barrier film after forming the barrier film.


Inventors:
TAKIGAWA YUKIO
Application Number:
JP2010000165611
Publication Date:
February 09, 2012
Filing Date:
July 23, 2010
Export Citation:
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Assignee:
FUJITSU SEMICONDUCTOR LTD
International Classes:
H01L23/52; H01L21/3205
Attorney, Agent or Firm:
高橋 敬四郎
来山 幹雄