Title:
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3445585
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device for comparatively easily forming structure for preventing a charge-up damage.
SOLUTION: A conductive layer which is electrically connected to a semiconductor substrate is formed on an insulating layer on the semiconductor substrate via a through part reaching the semiconductor substrate via the insulating layer in a part corresponding to a conductive path. A patterning processing using plasma etching is performed on the conduction layer, and the conduction path is formed in a state where the conductive layer is electrically connected to the semiconductor substrate via the through part. Heat treatment is applied on the substrate or the conductive path to cut the electrical connection of the through part and a semiconductor substrate part which is brought into contact with the through part by the reaction of them after the conductive path is formed.
Inventors:
Toru Yoshie
Kazuhide Abe
Yuusuke Harada
Kazuhide Abe
Yuusuke Harada
Application Number:
JP2001263435A
Publication Date:
September 08, 2003
Filing Date:
August 31, 2001
Export Citation:
Assignee:
Oki Electric Industry Co., Ltd.
International Classes:
H01L21/28; H01L21/302; H01L21/3065; H01L21/3213; H01L21/768; H01L23/525; (IPC1-7): H01L21/3065; H01L21/28; H01L21/3213; H01L21/768
Domestic Patent References:
| JP9321279A | ||||
| JP5251693A | ||||
| JP969607A | ||||
| JP10189501A |
Attorney, Agent or Firm:
Yukio Sato
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